MOSFETs - Silicon Carbide MaxSiC™ MOSFETs
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Series ▲▼  | Package ▲▼ | Drain-Source Breakdown Voltage VDS (V) ▲▼ | Typ. RDS(on) at 25 °C (mΩ) ▲▼ | Total Gate Charge Qg (nC) ▲▼ | Max. Drain Current ID (A) ▲▼ | Output Capacitance Coss (pF) ▲▼ | Max. Power Dissipation PD (W) ▲▼ | Max. Junction Temperature TJ (°C) ▲▼ | Qualification ▲▼ |
|---|---|---|---|---|---|---|---|---|---|
 | TO-247 3L | 1200 | 80 | 47.3 | 29 | 50 | 139 | 150 | Industrial |
